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Product Description
The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5 V. The SGL-0163 has been characterized at Vd = 3 V for low power and 4 V for medium power applications. Only 2 DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800-1300 MHz. The useful range of the SGL-0163 may be extended down to 100 MHz using simple lumped element tuning. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
VS
Temperature Compensation Circuit
SGL-0163 SGL-0163Z
Pb
RoHS Compliant & Green Package
100 - 1300 MHz Silicon Germanium Cascadable Low Noise Amplifier
Product Features * Available in Lead Free, RoHS Compliant * * * * * *
green package ( Z Suffix ) Internally Matched to 50 Ohms 800-1300 MHz High Input / Output Intercept Low Noise Figure: 1.2dB typ. at 900 MHz Low Power Consumption Single Voltage Supply Operation Internal Temperature Compensation
RF Out / VS
RF In
Applications * Receivers, GPS, RFID * Cellular, Fixed Wireless, Land Mobile
Symbol Parameter Freq. (MHz ) 800 900 1000 800 900 1000 800 900 1000 800 900 1000 900 900 900 9.5 10.0 11.5 Min.
(VS=3V)
Typ.
(VS=3V)
Max.
(VS=3V)
Typ.
(VS=4V)
Units
G
Small Signal Gain
14.0
15.7 15.5 14.1 4.4 5.2 5.6 5.3 7.0 9.0 1.1 1.2 1.2 12.5 15.6 20.9 12.0 255
17.0
16.6 15.8 15.0 9.9 10.1 10.5 12.1 13.4 14.8
dB
P 1dB
Output Power at 1dB Compression Input Third Order Intercept Point
3.2
dB m
IIP3
Tone Spacing = 1 MHz Pout per tone = -13dBm
5.0
dB m
NF IRL ORL S 12 ID RTH,j-l
Noise Figure, ZS = 50 Ohms Input Return Loss Output Return Loss Reverse Isolation Device Current Thermal Resistance (junction to lead)
1.7
1.6 1.7 1.7 15.7 17.6 20.9
dB dB dB dB mA
o
14.0
23
C/W
Test Conditions: 800-1300 MH z Application Circuit TLEAD = 25C
Z0 = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
EDS-101501 Rev C 1
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
Typical RF Performance at VS = 3 V and 4 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25C
Input IP3 vs Frequency
22.0 20.0 18.0 16.0 Input IP3 (dBm) P1dB (dBm) 14.0 12.0 10.0 8.0 6.0 4.0 2.0 800 +3V +4V 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 800
P1dB vs Frequency
+3V +4V
850
900
950
1000
1050 Freq. (MHz)
1100
1150
1200
1250
1300
850
900
950
1000
1050 Freq. (MHz)
1100
1150
1200
1250
1300
SGL-0163 Noise Figure
2.0 1.9 1.8 1.7
Output IP3 vs Frequency
34.0 32.0 30.0 28.0 Output IP3 (dBm) 26.0 24.0 22.0 20.0 18.0 16.0 14.0 800 +3V +4V
NF (dB)
1.6 1.5 1.4 1.3 1.2 1.1 1.0 800 +3V +4V
850
900
950
1000
1050 Freq. (MHz)
1100
1150
1200
1250
1300
850
900
950
1000
1050 Freq. (MHz)
1100
1150
1200
1250
1300
Absolute Maximum Ratings
Device Voltage (VD) vs. Device Current (ID) Over Temperature Load lines for VS = +5 Volts, RB2 = 43 W and 180 W
5.0
VS= +5 V, RB2 = 43 W
Parameter Max. Device Current (ID) Max. Device Voltage (VS) Max. RF Input Power
Absolute Limit 45 mA 5V +10 dBm
+150C -40C to +85C +150C
4.5 4.0 3.5 VD (Volts) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 11 16 ID (mA) 21 26
VS = +5 V, RB2 = 180 W
-40C +25C +85C
Max. Junction Temp. (TJ)
Operating Temp. Range (TLEAD)
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TLEAD) / RTH, j-l
303 South Technology Court Broomfield, CO 80021
EDS-101501 Rev C 2
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
Typical RF Performance at VS = 3 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25C
20 18 16 14 12 10 800 900 1000 1100 1200 1300
|S21| vs. Frequency
-1 0 -1 2 -1 4 -1 6 -1 8 -2 0 800 900
|S11| vs. Frequency
S21 (dB)
S11 (dB)
1000
1100
1200
1300
F re q u e n c y (M H z)
-1 5 -1 7 -1 9 -2 1 -2 3 -2 5 800 900 1000 1100 1200 1300
F re q u e n c y (M H z)
-1 0 -1 4 -1 8 -2 2 -2 6 -3 0 800 900 1000 1100 1200 1300
|S12| vs. Frequency
|S22| vs. Frequency
S12 (dB)
F re q u e n c y (M H z)
S22 (dB)
F re q u e n c y (M H z)
Typical RF Performance at VS = 4 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25C
20 18 16 14 12 10 800 900 1000 1100 1200 1300
|S21| vs. Frequency
-1 0 -1 2 -1 4 -1 6 -1 8 -2 0 800 900
|S11| vs. Frequency
S21 (dB)
S11 (dB)
1000
1100
1200
1300
F re q u e n c y (M H z)
-1 5 -1 7 -1 9 -2 1 -2 3 -2 5 800 900 1000 1100 1200 1300
F re q u e n c y (M H z)
-1 0 -1 4 -1 8 -2 2 -2 6 -3 0 800 900 1000 1100 1200 1300
|S12| vs. Frequency
|S22| vs. Frequency
S12 (dB)
F re q u e n c y (M H z)
S22 (dB)
F re q u e n c y (M H z)
NOTE: Full S-parameter data available at www.sirenza.com
303 South Technology Court Broomfield, CO 80021 EDS-101501 Rev C 3 Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
800-1300 MHz Application Circuit
+VS
NOTE: Pin 1 must be electrically floating. Do not connect to ground. Provide an isolated solder pad for mounting integrity.
Application Circuit Element Values
RB2 CD2
CD1
Reference Designator LB
Value 33 nH
Manufacturer & Part No. TOKO LL1608-FS27NJ
RB1 (OPT.)
B1 (OPT.)
B1
1
1500 Ohms FAIR-RITE 2508051527y0 @100 MHz Ferrite Bead 0.1 uF 22 pF 47 Ohms 0 Ohms SAMSUNG CL10B103KBNC ROHM MCH185AA220DJK PHILLIPS 9C06031A47R0 JL HFT PHILLIPS 9C06031A0R00 JL HFT
RF INPUT CB 3
4
SGL-0163
LB
RF OUTPUT CB
C B, C D 1 C D2 RB1 RB2
1
6 5
2
800-1300 MHz Evaluation Circuit Board
SIRENZA MICRODEVICES ECB-101761 Rev B
Notes: 1. B1 and RB1 provide improved K-factor but are optional.
2. RB2 may be introduced as a voltage dropping resistor for use with supply voltages greater than the desired device bias voltage.
Device Pin Out Guide
Pin # Function N/C Description No electrical connection. Provide an isolated (ungrounded) solder pad for mounting integrity. RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Voltage supply connection. Bypass with suitable capacitors. Connection to ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and voltage supply. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
RF IN
CB
SGL-0163
CB
LB
RB1
RF OUT
1
3
RF IN
B1
4
CD1 CD2
RB2
DC BIAS
2, 5
Ground
6
RF OUT/ BIAS
Note: Circuit board dielectric material is GETEK,ML200C
+VS GND
Part Identification Marking & Pin Out
Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1A MSL 1
654
654
L3
123
Tin-Lead
L3Z
123
Lead Free RoHs Compliant
The product qualification report may be dow nloaded at w w w.sirenza.com
Part Ordering Information
Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number SGL-0163 SGL-0163Z
P ackag e / L ead Composition Tin-Lead Lead Free, RoHs Compliant
R eel Siz e 7" 7"
Devices / R eel 3000 3000
303 South Technology Court Broomfield, CO 80021
EDS-101501 Rev C 4
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
Pad Layout
0.026
0.075
Notes: 1. Provide a ground pad area under device pins 2 & 5 with plated via holes to the PCB ground plane. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides.
0.035
0.016
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com.
303 South Technology Court Broomfield, CO 80021
EDS-101501 Rev C 5
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
100-800 MHz Operation
The useful range of the SGL-0163 may be extended down to 100Mhz using simple lumped element tuning. Following are two examples. Option 1. A series inductor introduced at the input and output optimizes RF performance over 100MHz wide bands. Band center is selected by adjustment of the inductor values. The example presented is optimized for the 400-500 MHz band. Option 2. An RC feedback network provides broadband RF performance from 100-800MHz. The resistor value may be adjusted to select a combination of gain/NF/return loss best suited to the particular application. Data and schematics for these two options are presented below and on the following pages. Contact Sirenza amplifier applications for further guidance.
Option 1. Series L Tune
Option 2. RC Feedback Tune
Sirenza Microdevices ECB-101761 Rev. B
Sirenza Microdevices ECB-101761 Rev. B
10pF 10nH 10nH
Cc1
1000pF
1500 Ohms
SGL-0163
Cc2
SGL-0163 1000pF
OUT
OUT
IN
22nH Rb1 B1 Cd1 Cd2 Rb2
IN
470 nH B1 Rb1 Cd1 Cd2 Rb2
Eval Board
Vcc
Eval Board
Vcc
+Vcc
GND
+Vcc
GND
Application Circuit Parts List
Ref. Designator B1
2
Description Ferrite Bead
Value
Manufact. Part No.
Notes: (1) Circuit board dielectric material is GETEK,ML200C (2) B1 and Rb1 recommended for improved K-factor but are optional. Replace with 0 Ohm resistor if not used.
1500 Ohms FAIR-RITE 2508051527y0 @100 MHz 0.1 uF 22 pF 47 Ohms 0 Ohms N/A SAMSUNG CL10B103KBNC T/R ROHM MCH185AA220DJK PHILLIPS 9C06031A47R0 JL HFT PHILLIPS 9C06031A0R00 JL HFT Sirenza Microdevices ECB101761 Rev B
Cc1,Cc2,Cd1 Capacitor,SM,0603 Cd2 Rb1
2
Capacitor,SM,0603 Resistor,SM,0603 Resistor,SM,0603 Circuit Board
Rb2 N/A 1
303 South Technology Court Broomfield, CO 80021
EDS-101501 Rev C 6
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
RF Performance - 400-500MHz Series L Application Circuit
Gain vs. Frequency @ T LEAD =+25C 400-500 MHz Series L Application Circuit
24 23
IRL, VS=3V
Gain vs. Frequency @ TLEAD=+25C 400-500 MHz Series L Application Circuit
0
22 21 Gain (dB)
Gain (dB)
-4
IRL, VS=4V ORL, VS=3V ORL, VS=4V
20 19 18 17 16 15 14 400
VS=3V, ID=11mA VS=4V, ID=23mA
-8
-12
-16
410
420
430
440
450
460
470
480
490
500
-20 400
410
420
430
440
450
460
470
480
490
500
Frequency(MHz)
Frequency(MHz)
V S=3V, I D=11mA (Typ.) Freq 400 MHz 450 MHz 500 MHz Gain (dB) 22.0 21.3 20.6 P1dB (dBm) 4.4 5.0 5.7 IIP3 (dBm) 1.3 3.2 4.1 OIP3 (dBm) 23.1 24.7 24.7 NF (dB) 1.1 1.3 1.3
V S=4V, I D=24mA (Typ.) Freq 400 MHz 450 MHz 500 MHz Gain (dB) 23.1 22.2 21.2 P1dB (dBm) 10.9 11.4 12.0 IIP3 (dBm) 6.5 8.1 7.8 OIP3 (dBm) 29.6 30.3 28.9 NF (dB) 2.0 2.1 2.1
RF Performance - 100-800 MHz RC Feedback Application Circuit
Gain vs. Frequency @ T LEAD=+25C 100-800 MHz Feedback Application Circuit
30 28 26 24 Gain (dB) 22 20 18
-25 Return Loss (dB) -10
VS=3V, ID=11mA VS=4V, ID=23mA
Return Loss vs. Frequency @ TLEAD=+25C 100-800 MHz Feedback Application Circuit
0
IRL, VS=3V
-5
IRL, VS=4V ORL, VS=3V ORL, VS=4V
-15
-20
16 14 100
-30
150
200
250
300
350
400
450
500
550
600
650
700
750
800
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
Frequency(MHz)
Frequency(MHz)
VS=3V, ID=11mA (Typ.) Freq 100 MHz 300 MHz 500 MHz 800 MHz Gain (dB) 23.9 21.4 18.7 15.2 Gain (dB) 26.3 23.0 19.8 16.1 P1dB IIP3 (dBm) (dBm) 3.5 -6.8 3.4 -2.5 3.5 0.1 3.7 4.3 VS=4V, ID=23mA (Typ.) P1dB (dBm) 9.2 9.8 9.9 10.0 IIP3 (dBm) -4.1 2.2 5.2 9.7 OIP3 (dBm) 17.1 18.9 18.8 19.5 OIP3 (dBm) 22.2 25.1 25.0 25.8 NF (dB) 1.4 1.2 1.2 1.2 NF (dB) 2.2 1.9 1.7 1.7
Freq 100 MHz 300 MHz 500 MHz 800 MHz
303 South Technology Court Broomfield, CO 80021
EDS-101501 Rev C 7
Phone: (800) SMI-MMIC http://www.sirenza.com

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